Study of Al/Si Interface by Photoemission, Auger Electron Spectroscopies

摘要

Photoemission, Auger electron yield, and Auger electron spectra were observed for Al/Si(111) interfaces with various Al coverage prepared by successive deposition using a molecular beam source. The Al 3p derived states are introduced at around the top of the valence band by the Al coverage of less than one monolayer. The Al surface layer behaves as a 'metal' and the Fermi level is stabilized in the Al 3p derived states at about 0.3 eV above the top of the valence band of Si. The Schottky barrier height in this stage is about 0.8 eV and further increase in Al coverage does not change the barrier height. A covalent bonding model of the Al/Si interface based on the experimental results is proposed. The present result favors the on-top geometry of Al atoms on Si(111) surface among the geometries used in the pseudopotential calculation by Zhang and Schlueter.