首页> 美国政府科技报告 >Low energy proton damage effects in silicon and gallium arsenide solar cells

【24h】

Low energy proton damage effects in silicon and gallium arsenide solar cells

机译：硅和砷化镓太阳能电池中的低能质子损伤效应

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Proton damage to silicon and gallium arsenide solar cells

著录项

作者
Brown, D. M.;
展开▼
作者单位

展开▼
年度 1964
页码 1-20
总页数 20
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
GALLIUM ARSENIDES; PROTON DAMAGE; SILICON; SOLAR CELLS; GALLIUM ARSENIDE; PROTON DAMAGE; SILICON; SOLAR CELL;

机译：GaLLIUm aRsENIDEs;质子损伤;硅;太阳能电池; GaLLIUm aRsENIDE;质子损伤;硅;太阳能电池;

相似文献

外文文献
中文文献
专利

1. Proton induced bulk damage effects in gallium arsenide detectors [J] . Nava F., Cavallini A., Castaldini A., Nuclear physics, B . 1998,第S61B期

机译：质子在砷化镓探测器中引起的整体损伤效应
2. Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells [J] . Vishnuvardhanan Vijayakumar, Dunbar P. Birnie III Solar Energy . 2013,第nova期

机译：砷化镓/硅串联四端子太阳能电池的光学和电子模拟
3. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications [J] . Kumar RA., Nagaraju J., Suresh MS. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2000,第2期

机译：用于太空应用的硅（BSR和BSFR）和砷化镓（GaAs / Ge）太阳能电池的交流参数的测量和比较
4. SILICON AND GALLIUM ARSENIDE SOLAR CELLS FOR LOW INTENSITY, LOW TEMPERATURE OPERATION [C] . G. Strobl, P. Uebele, R. Kern, IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC . 1994

机译：硅和砷化镓太阳能电池，用于低强度，低温操作
5. Displacement damage-induced electrical and structural effects in gallium arsenide solar cells following ion irradiation [D] . Warner, Jeffrey Hamilton 2008

机译：离子辐照后砷化镓太阳能电池中位移损伤引起的电和结构效应
6. Low-dose energetic protons induce adaptive and bystander effects that protect human cells against DNA damage caused by a subsequent exposure to energetic iron ions [O] . Manuela Buonanno, Sonia M. De Toledo, Roger W. Howell, 2015

机译：小剂量高能质子诱导适应性和旁观者效应从而保护人体细胞免受随后暴露于高能铁离子引起的DNA损伤
7. Forward-bias current annealing of radiation damaged gallium arsenide and silicon solar cells. [O] . Staats Richard L. 1987

机译：辐射损坏的砷化镓和硅太阳能电池的正向偏置电流退火。
8. Low energy proton damage effects in silicon and gallium arsenide solar cells [R] . Brown, D. M. 1964

机译：硅和砷化镓太阳能电池中的低能质子损伤效应

Low energy proton damage effects in silicon and gallium arsenide solar cells

摘要

著录项

相似文献

相关主题

期刊订阅