SEU and SEL response of the Westinghouse 64K E(sup 2)PROM, analog devices AD7876 12-bit ADC, and the Intel 82527 Serial Communications Controller

摘要

The Westinghouse SA3823 64K E(sup 2)PROM radiation-hardened SONOS non-volatile memory exhibited a single-event-upset (SEU) threshold in the read mode of 60 MeV-cm(sup 2)/mg and 40 MeV-cm(sup 2)/mg for data latch errors. The minimum threshold for address latch errors was 35 MeV-cm(sup 2)/mg. Hard errors were observed with Kr at V(sub p) = 8.5 V and with Xe at Programming voltages (V(sub p)) as low as 7.5 V. NO hard errors were observed with Cu at any angle up to V(sub p) = II V. The system specification of no hard errors for Ar ions or lighter was exceeded. No single-event latchup (SEL) was observed in these devices for the conditions examined. The Analog Devices AD7876 12bit analog-to-digital converter (ADC) had an upset threshold of 2 MeV-cm(sup 2)/mg for all values of input voltage (V(sub in)), while the worst-case saturation cross section of (approximately)2 (times) 10(sup (minus)3) cm(sup 2) as measured with V(sub in) = 4.49 V. No latchup was observed. The Intel 82C527 serial communications controller exhibited a minimum threshold for upset of 2 MeV-cm(sup 4)/mLi, and a saturation cross section of about 5 (times) 10(sup (minus)4)cm(sup 2). For latchup the minimum threshold was measured at 17 MeV-cm(sup 2)/mg, and cross section saturated at about 3 (times) 10(sup (minus)4) cm(sup 2). Error rates for the expected applications are presented.