Velocity matched electrode structures on doped semiconductors for large bandwidth optoelectronic modulators

摘要

High-speed optoelectronic modulators are becoming increasingly important in microwave applications. These devices are necessarily electrically large and hence require velocity matching of the microwave signal to the light. A design methodology for velocity matched electrodes on doped semiconductor devices will be presented. As an example of a successful device design, experimental results on a >10 bandwidth high-efficiency (>15(degrees)/V/mm) Mach Zehnder interferometer will be presented.