首页> 美国政府科技报告 >Atomic-scale characterization of hydrogenated amorphous-silicon films and devices. Annual subcontract report, 14 February 1995--14 April 1996
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Atomic-scale characterization of hydrogenated amorphous-silicon films and devices. Annual subcontract report, 14 February 1995--14 April 1996

机译:氢化非晶硅薄膜和器件的原子级表征。年度分包合同报告,1995年2月14日至1996年4月14日

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The research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigation techniques that minimize the particle incorporation. During this contract period, the authors have developed a novel particle light-scattering technique that provides a very detailed and sensitive diagnostic of the particles suspended in the discharge. The second program is directed toward measuring the electronic properties of these thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope (STM) to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, cell cleaving and cross section locating methods, both in a UHV environment, have been successfully developed.

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