Use of high index substrates to enable dislocation filtering in large mismatch systems

摘要

We report results in three areas of research relevant to the fabrication of a wide range of optoelectronic devices: The development of a new x-ray diffraction technique that can be used to rapidly determine the optimal period of a strained layer superlattice to maximize the dislocation filtering; The optimal MBE growth parameters for the growth of CdTe on GaAs(211); The determination of the relative efficiency of dislocation filtering in the (211) and (100) orientations; and The surface quality of InSb grown by MOCVD on InSb substrates is affected by the misorientation of the substrate.