Characterization of high-temperature superconductor film layers using Raman211 Spectroscopy

摘要

High-temperature superconductor films can be characterized using Raman211u001espectroscopy to obtain the crystal orientation, oxygen concentration, and layer 211u001ethickness for the film layers. This information is essential in determining 211u001echaracteristics of the films, such as transition temperature and current density. 211u001eGood quality films need high transition temperature and current density. 211u001ePreviously published work shows that the theory and background work on Raman 211u001espectroscopy on high-temperature superconductor films gives this information. 211u001eEarlier research on high-temperature superconductor films shows how the films can 211u001ebe characterized. By applying these different methods Raman data can be used as 211u001ean effective analytical technique. An experimental setup is designed to evaluate 211u001ethe feasibility of acquiring the data quickly in an industrial environment using 211u001ealternate technology than that used by previous researchers. Previous work in 211u001ethis area has been constricted to microprobe techniques that study single 211u001ecrystals of the superconductor. A technique is used which could give overall 211u001eRaman data from a large area of the film, as opposed to single crystals or 211u001egrains. Background and experimental work described in this thesis describes a 211u001emethod for determining layer thickness in buffer and superconducting film layers. 211u001eData is collected from a single film sample and a proposed buffer layer sample. 211u001eThis data is used to identify necessary improvements to the basic experimental 211u001esetup to create a real-time, in situ, Raman diagnostic setup for use in 211u001eindustrial, high-temperature superconductor film processes.