Effect of Chlorine Implantation on The Pitting Behavior of Aluminum

摘要

Using plasma-beam techniques, an engineered on Al thin film substrates.Electrochemical Al oxide has been placed testing indicates that this structure has a low susceptibility to pitting corrosion making it an ideal control on which to study the impact of intentionally introduced defects. Results from potentiodynamic polarization experiments and chemical etching indicate that this engineered oxide is extremely robust compared to air-formed oxides. Subsequent ion beam implantation was used to introduce Cl into the deposited oxide. Minimal impact on both electrical and ionic conductivity of the oxide was observed for Cl concentrations of approximately 0.4 a/o. Approximately an order of magnitude higher Cl concentration is expected in an oxide formed after HNO(sub 3) etching to the peak of the Cl implant distribution. This oxide had an elevated ionic conductivityy and enhanced susceptibility to pit initiation.