Heat Exchanger-Ingot Casting/Slicing Process. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Third Quarterly Progress Report, April 1, 1976--June 18, 1976

摘要

The object of this program is to demonstrate that large single-crystal ingots, 6-inch diameter by 4 inches tall, can be economically cast by the Heat Exchanger Method (HEM) and economically sliced into thin sheets, 0.008-inches thick, with a multi-wafer slicer. The thrust of the experimental work during this quarter was to establish the proper seed meltback and to nucleate single-crystal growth off the seed. Slicing tests were begun on the multi-blade wafering machine, using a newly fabricated sensitive feed mechanism and associated components. (ERA citation 02:002602)