Short-Term Annealing in Silicon Devices after Fission and Fusion Irradiations.

摘要

The described technique estimates the transient recovery of a semiconductor device to a short pulse of damaging radiation. Unlike previous techniques this method uses meaningful parameters,at relevant fluences,of typical mil. spec. devices. Using existing simulation facilities steady state (seconds) irradiations are proposed and a Fredholm integral equation is unfolded to obtain the transient response. The technique,which is applicable to both neutron and gamma radiation,is demonstrated by a simulated neutron irradiation transient recovery experiment. Applied to weapons systems the technique facilitates accurate predictions of electronic recovery times after exposure of the system to a weapons burst. It also obviates the necessity of building new pulsed simulation machines for direct measurement of transient recovery. (ERA citation 02:060812)