Horizontal Crystal Growth of Silicon Ribbon. Technical Progress Report, September 15, 1979-May 15, 1980

摘要

During the reporting period, there were thirty-six experimental ribbon-growth runs. A melt-level control system has been designed, built and tested, but not yet demonstrated in conjunction with ribbon growth. In developing a graphite-crucible growth system, a variety of modifications were made to achieve a suitable thermal distribution. Several scraper designs were tested in attempting to overcome a persistent problem of meniscus instability with graphite as the scraper material. The process has demonstrated controlled growth of ribbons up to 2.5 cm wide at pull rates over 75 cm/min. Growth was obtained in 25% of the experiments conducted. (ERA citation 08:009525)