High Temperature Metallization System for Solar Cells and Geothermal Probes

摘要

Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on semiconducting substrates by RF sputtering from composite cathodes. The films adhere extremely well to Si, GaAs, and GaP during and after thermal cycling from -200 exp 0 C to at least 500 exp 0 C. All films investigated to date have remained amorphous during 1 hour anneals at 500 exp 0 C, and some alloy compositions have been found which remain amorphous after annealing at greater than or equal to 575 exp 0 C. Rutherford backscatter analysis has been used to study the diffusivity of Au in amorphous Ni-Nb. D < 10 exp -18 cm exp 2 /S was found at 450 exp 0 C. Additional diffusion studies have been performed using Auger profiling. Initial results show that amorphous Ni-Nb and W-Si may be excellent diffusion barriers against Cu and Au, respectively, at temperatures less than or equal to 500 exp 0 C. (ERA citation 06:011277)