Re-Examination of the Threshold Energy Surface in Copper

摘要

Radiation-induced defect production in copper has been studied using in-situ electrical resistivity damage-rate measurements in the HVEM and molecular dynamics simulations. Analysis of the results yields a threshold energy surface characterized by two isolated pockets of low threshold energy centered at and surrounded by regions of much higher threshold energy; the corresponding damage function exhibits a plateau at 0.65 Frenkel pairs. A Frenkel pair resistivity of (2.75/sub -0.2/ exp +0 exp 6 ) x 10 exp -4 omega -cm is proposed. A model damage function is constructed and compared to results from ion irradiation damage-rate measurements. 7 figures. (ERA citation 08:023935)