Polka DOT Solar Cell. Final Report, 1 April 1980-29 May 1981

摘要

Polka dot solar cells are named for their conducting grid pattern. A model was developed for thick epitaxial layer front junctions with moderate doping levels. The dependence of surface recombination velocity on doping is briefly discussed and epitaxial emitter cell fabrication by solution growth of Si from Sn is described. Two electron beam methods were used to determine the minority carrier diffusion lengths in the epitaxial layers. Arsenic diffusion from Sn-As sources is examined. Some possible modifications to the polka dot cell process are described.