Photoelectronic Properties of Zinc Phosphide Crystals, Films, and Heterojunctions. Quarterly Progress Report No. 13 for the Period April 1-June 30, 1982

摘要

The research on zinc phosphides is summarized and includes: Zn sub 3 P sub 2 materials preparation; electrical characterization of Zn sub 3 P sub 2 crystals; characterization by low temperature photoluminescence, photoconductivity, Auger electron spectroscopy, and transmission electron microscopy; investigation of Zn sub 3 P sub 2 based devices; and Zn sub 3 P sub 2 films grown by close spaced vapor transport. An approach to future research on Zn sub 3 P sub 2 is summarized and includes: chemical vapor transport growth with ZnCl sub 2 , ZnBr sub 2 , and ZnI sub 2 ; an investigation of defect structure vs deviations from stoichiometry; growth and properties of (Zn sub 3 P sub 2 )/sub x/(Cd sub 3 P sub 2 )/sub 1-x/ solid solutions; surface investigations on Zn sub 3 P sub 2 ; reactive metal junctions; and MIS structures on Zn sub 3 P sub 2 . Appended are two manuscripts, one on transport mechanisms for mg/Zn sub 3 P sub 2 junctions and the other on properties of Zn sub 3 P sub 2 crystals and devices. (ERA citation 07:061086)