MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques for Cadmium Telluride Solar Cells: Annual Subcontract Report, 15 February 1985 to 15 February 1986

摘要

This report summarizes the application of metal-organic chemical vapor deposition (MOCVD) film-growth technique to two aspects of CdTe/ITO solar cell fabrication: the growth of large-area CdTe films on ITO and the formation of low-resistance ohmic contacts to p-type CdTe. In this work, uv-assisted MOCVD was developed for the deposition of CdTe films to lower the growth temperature and minimize the tendency of damage to the ITO layer. Also, MOCVD growth of HgTe was developed as an ohmic contact metallization to the CdTe layer of the photovoltaic structure. This report details the MOCVD reactor geometries and process parameters used in the development of the CdTe and HgTe layer growth, as well as the results of Auger analysis of layer composition and interlayer diffusion, x-ray analysis of film crystallinity, and electrical analysis of HgTe/CdTe specific contact resistance. (ERA citation 12:034753)