Radiation Damage Studies of a Custom-Designed VLSI Readout Chip

摘要

Two structurally similar versions of an NMOS custom VLSI circuit, manufactured at different foundries, have been irradiated with a sup 60 Co source up to doses of 100 krad. Large differences in their behaviour after irradiation have been seen which are thought to be due to the fabrication processes. These differences are observed in test structure measurements and overall chip performance. An increase in circuit noise causes one version of the chip to be unusable after radiation doses of 20 krad. (ERA citation 13:006379)