Dissolution of B-Doped S1(100) Layers in NaOH Aqueous Solutions

摘要

NaOH solution has been used to study the dissolution rates of boron doped Sl(100) wafers as a function of solution normality (0.02 N to 15 N) and temperature in the range of 30 deg. C to boiling point. For a dissolution at boiling point, two distinctive ranges of solution normalities have been observed. For N less than or equal to 4.5, the dissolution rate increases logarithmically and is defect dependent. For higher values of N greater than or equal to 4.5 normal, the dissolution rate becomes a linear function of normality and reaction is defect dependent. The reaction activation energy has been measured equal to 0.65 +- 0.03 eV. (author). 7 refs, 5 figs. (Atomindex citation 20:040954)