Research on High-Efficiency, Multi-Gap, Multijunction, Amorphous-Silicon-Based Alloy Thin-Film Solar Cells: Phase I Annual Subcontract Report, 1 March 1987-29 February 1988

摘要

This report describes the first year of progress in research directed toward material development, single-junction solar cell research, and deployment of high-efficiency multijunction solar cells prepared of alloys of amorphous silicon. High-quality a-SiGe alloys were made with a band gap of 1.4 eV. Incorporation of this material in tandem and triple-junction cells resulted in the world's highest efficiency a-Si based alloy thin-film solar cells to date. Efficiencies of 12.7% for dual-gap tandem and 13.6% for dual-gap triple cells were measured under global AM1.5 illumination at 25C. Further optimization of materials and device designs should result in efficiencies of about 15% during Phase II of the program. 21 refs., 51 figs., 19 tabs. (ERA citation 14:014538)