High performance, picosecond radiation detectors grown by molecular beam epitaxy for millimeter-wave diagnostic systems.

摘要

GaAs layers grown by MBE at reduced substrate temperatures have been demonstrated to have excellent properties as picosecond photoconductive devices. Results will be presented demonstrating the superior performance of this technology in comparison to picosecond photoconductors fabricated from other materials, along with a discussion of its application to millimeter wave bandwidth photonic diagnostics systems. 4 refs., 2 figs.