首页> 美国政府科技报告 >Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias.
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Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias.

机译:作为栅极偏压的函数的mOs器件的低能X射线和钴-60辐射的比较。

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摘要

The E(sup (minus)(1/2)) electric field dependence of the saturated density of interface traps in MOS devices is used to improve estimates of charge yield during (sup 60)Co irradiations. Previous discrepancies between 10-keV x-ray and (sup 60)Co response are resolved. 14 refs., 7 figs.

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