Structure and property of heteroepitaxial TiO(sub 2)/VO(sub 2) multilayers

摘要

Various types of TiO(sub 2)/VO(sub 2) multilayer structures have been prepared on sapphire substrates by a low-pressure metal-organic chemical vapor deposition process. X-ray diffraction and transmission electron microscopy techniques were used to study the crystallinity and epitaxial relationships of the deposited films. High resolution electron microscopy was used to examine the microstructure of the overlayers and interfaces. Electrical resistivity measurements were performed to investigate the metal-semiconductor phase transition of VO(sub 2) layers in multilayer structures. (ERA citation 17:028705)