Process Models for Infrared Focal Plane Array Flexible Manufacturing

摘要

The objective of this work is to assist industry in its efforts to devise aflexible manufacturing means for production of high performance Hg(1-x)Cd(x)Te-based focal plane arrays at reduced costs. The program has focused on the properties of impurities and native defects in the material, and how they subsequently impact the device performance. We find that the cation vacancy is a single acceptor in x = 0.2 material, contrary to previous findings. We have explained the inactive incorporation of the group VII elements under mercury-deficient conditions. We have shown that the group I elements have a large fraction of interstitial incorporation, thereby explaining their fast diffusion. We have predicted a model for the amphoteric behavior of arsenic, and have explained its behavior in liquid phase epitaxy from both the tellurium-melts and the mercury-melts. Annealing strategies for activation arsenic as a p-type dopant following growth by molecular beam epitaxy have also been suggested. Our modeling of the MBE growth surface indicates that growth rates are fastest on the .211 B surface, but that there will be fewer grown-in defects on the .211 A surface.