Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study; Final technical rept. 1 Sep 2006-31 May 2007

摘要

This report describes exploratory studies in the fabrication of the GaN LPH structures and their application in the fabrication of a depletion-mode metal semiconductor field effect transistors (MESFETs). Exploiting LPH growth technology, and the difference in the electronic properties of the different type of domains, i.e. as grown N-polar domains are conductive and Ga-polar domains are insulating, laterally selective doped areas can be realized for improving contact resistance to the conduction channel in GaN MESFETs. Basically, the N-polar domains act as the ohmic contacts to the channel that is localized in a Ga-polar domain.