Effects of Differing Carbon Nanotube Field-effect Transistor Architectures

摘要

Single-walled carbon nanotube field-effect transistors (SWCNTFETs) were fabricated with varying device architectures. Variations on the standard back-gated architecture included varying the gate oxide material and thickness, changing source and drain contact metallization, suspending the carbon nanotubes to minimize interaction with the gate oxide, and fabricating a topgated architecture employing a thin layer of aluminum oxide (Al2O3) as the gate oxide. Devices were characterized and compared to each other based on the CNTFET properties of noise, hysteresis, sub-threshold slope, and threshold voltage. Results show that some properties of the CNTFET, such as hysteresis and noise can be modified; other properties, however, are intrinsic to the CNT.