Integrated Circuits for Portable Radar Equipment

摘要

The results of experiments on factors determining the surface structure and topography of the germanium growth front during selective etch and deposition in GaAs are summarized. Experimental data have been obtained which show that preferential growth near the pocket edges can be eliminated by partially refilling the etched regions. The surface topography of the selectively deposited germanium is determined primarily by the substrate temperature and the GeCl4 concentration. The device to be fabricated in the Ge pockets is described. (Author)