p-n Junction PbS Sub 1-x Se Sub x Photodiodes Fabricated by Se(+) Ion Implantation.

摘要

PbS(1-x)Se(x) is a mixed IV-VI semiconductor which shows promise of being useful as a photodetector in the 3-5 micrometers region of the infrared spectrum at temperatures above 77 K. In this note, we report the use of Se(+) ion implantation to convert layers of n-type PbS(0.63)Se(0.37) into p-type material and present some results on photodiodes fabricated by this technique. (Author)