Metal-Semiconductor Junctions on Cleaved Cadmium Sulfide.

摘要

Diffused metal-semiconductor junctions were measured and compared to a theoretical model to obtain a better understanding of the barrier mechanisms after having first formed controlled Schottky barriers. Rectifying metal contacts of gold,silver and copper were deposited in situ on vacuum cleaved surfaces of conducting single crystal cadmium sulfide. The barrier parameters of the metal-semiconductor contact were determined from an analysis of differential capacitance and current-voltage experimental measurements. A theoretical model for a diffused metal-semiconductor barrier which included a semi-insulating layer and a linearly graded region was used to derive the capacitance-voltage relations. A parametric computer study of the model was done and the experimental data for several heat-treated barriers agreed favorably using this model. (Modified author abstract)