Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy.

摘要

Comparison of the 125Te Mossbauer spectra in amorphous and crystalline Te films indicates that in the amorphous phase the quadrupole splitting is about 20% greater and the recoil-free fraction about one-third as great as in the crystalline phase. The increase in quadrupole splitting is interpreted as indicating a decrease of about 3% in the length of the covalent bond between the nearest neighbor Te atoms in the amorphous state. The decrease in recoil-free fraction in the amorphous film is explained as due to dangling bonds at the ends of the Te chains which are responsible for a change in the density of phonon states in the system. A short paper covering this work has been prepared and is included as an Appendix to this report.