Negative Microwave Resistance Effect in Zero-Gap Semiconductors.

摘要

The band structure of alpha-tin and HgTe under uniaxial tensile stress has been investigated. Both zero and finite-temperature transport calculations were performed. While zero-temperature calculations indicated the negative differential resistivity (NDR) effect exists under stress, the finite temperature calculations indicated that it would be difficult to obtain NDR at room temperature unless the ffect could be enhanced by scattering or band coupling not included in the calculation. (Author)