Polarized Injection Laser Development.

摘要

This report is concerned with the successful development of room-temperature arrays of injection lasers with high polarization and with the study of the fundamental causes of polarization. Three types of multi-heterojunction wafers producing strong polarization are described. Arrays from the wafers have polarization ratios ranging from 90to 98%. The profiles in the junction plane are nominally 20degrees,while in the transverse plane they depend on the internal structure and range from 30to 80degrees. A reflecting layer added to the reverse facet increased the differential efficiency of the forward beam without spoiling the polarization. Data on the device properties are presented for system analysis.