Inert Carrier Process Application to HMX Nitrolysis and Recrystallization. Volume II. HMX Recrystallization.

摘要

Feasibility of recrystalling HMX in the CSD ICP pilot plant using the solvent/nonsolvent precipitant technique has been shown. Water wet HMX with .3-percent acetic acid, representative of crude HMX from the Bachman process, has been dissolved and recrystallized as the beta polymorph meeting military specifications for size and purity. HMX classes 1 and 5, of interest in this contract, were obtained; however, class 4 was not made. HMX classes 2 and 6 as well as some above the class 1 size were made during the process variables studies. These variables included (1) solvents and nonsolvents in varying ratios. (2) temperature, (3) filtration and washing capability, (4) crystal growth and nucleation variables, (5) occluded inpurities, and (6) HMX concentration in solvent recycles. Teflon lined, teflon coated, and high nickel stainless steels were found to be suitable construction materials. Teflon was the preferred seal material; however, silicone O-rings, in locations where Teflon was unusable, were found to be a short term solution. (Author)