MM&T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.

摘要

This report describes the Production Engineering of high power bulk semiconductor limiters for X-band frequencies. A high power bulk semiconductor limiter assembly, consisting of a high resistivity silicon bulk limiter and followed by a two-stage junction diode limiter was developed for the frequency band of 9 - 9.65 GHz. This receiver protector handles 20 kW of peak power at a 0.25 microsec pulse width and 4000 Hz pulse repetition frequency. High volume semiconductor batch processed and fabrication techniques were implemented to obtain this low cost and reliable receiver protector. A pilot line was established to fabricate the bulk limiters in production quantities for reliability testing and to supply the U.S. Army with eighty-five (85) units. (Author)