High Speed CCD (Charge Coupling Device) Design

摘要

The use of GaAs (Gallium Arsenide) in a CCD (Charge Coupling Device) structure should provide good transfer efficiencies at clock frequencies in excess of 1GHz. These high clock speeds imply that high speed analog signal processing algorithm can be implemented which can be useful in the front ends of high speed communication systems. This effort has been designed to investigate the fabrication of planar CCDs using ion implant technology and to design and fabricate support circuitry and rf hardware necessary to drive 4 phase CCDs at clock frequencies higher than 1GHz.