Computer-Assisted Analysis of Electronic Transport Data

摘要

A non-linear chisquare minimizing computer program has been developed that identifies impurities and dopants in semiconducting materials and calculates their concentration by fitting temperature dependent Hall data. The program calculates the carrier concentration by solving the charge balance equation and stepping sequentially toward the best fit to the data by varying the concentrations and ionization energies of the impurities. Computer-generated fits to a wide variety of samples have demonstrated the importance of including the correct carrier mass, using the proper Hall scattering factor, employing approximations with discretion, and for some samples including the excited states of the impurity. Emphasis is given to identifying and eliminating sources of error throughout the complete data collection and data analysis sequence. Keywords include: Semiconductor, Silicon, Hall effect, Electrical transport, Computer data analysis, Mobility, Effective mass, and Hall scattering factor.