Use of Depletion-Edge Translation for High Speed Modulation and Switching of Lightwaves: Year-1

摘要

This report describes a new device concepts for optical modulators and switches. Application may be found in optical communication, IC interconnection and optical computing. The basic concept involves combining and maximizing several effects that can occur in the depletion region of a semiconductor pn junction to change the index of refraction therein. As a reverse bias is applied to properly designed device, the depletion region gets wider and in the index shift within it gets larger relative to the surrounding material. The result is that more efficient, compact and potentially higher speed devices can be realized, since most optical modulation and switching concepts rely upon a change in the index of refraction in some region. Initial results have shown three-fold increase in the phase shifting efficiency) phase shift per unit length per volt) of simple phase modulators as compared to any previously published material.