Assessment of Silicon-on-Insulator Technologies for VLSI (Very Large Scale Integration)

摘要

A high-performance, cost-effective silicon-on-insulator (SOI) technology would have important near-term applications in radiation-hardened electronics and longer term applications in submicrometer VLSI. The advantages of SOI over bulk Si technology for these applications will be outlined, and CMOS, CJFET, and bipolar device structures being developed for SOI will be discussed. The current status and future prospects of the two most promising SOI technologies -- beam recrystallization and high-dose oxygen implantation -- will be reviewed, with emphasis on such issues critical to commercialization as material quality and manufacturing feasibility.