Forward-Biased Current Annealing of Radiation Damaged Gallium Arsenide and Silicon Solar Cells

摘要

Radiation damaged gallium arsenide and silicon solar cells were annealed using a combination of thermal and Forward-bias Current Annealing techniques. These cells were annealed under varying current densities from 0.125 A/sq. cm 2 to 1.250 A/sq. cm.2 and at temperatures from 90 C to 140 C. Gallium arsenide solar cells annealed at current densities from 0.250 A/sq. cm. 2 to 0.750 A/sq. cm. 2. Attempts to anneal silicon solar cells failed to produce positive results at all current densities. The primary application of this research is to determine the feasibility of on-orbit annealing of a satellite's solar array. At present, only silicon solar cells are deployed in space to provide electric power for satellites. When GaAs solar cells become space qualified, on-orbit Forward-bias Current Annealing of these solar arrays may significantly increase the end of life of orbiting satellites. Keywords: Gallium arsenide, Silicon; Solar cells; Annealing.