High Efficiency Octave Bandwidth Millimeter Wave Power Amplifier.

摘要

MM-Wave monolithic distributed amplifiers are designed to cover the 30-60 GHz frequency band. Both low-pass bandpass and negative resistance compensated designs are developed. The MMIC designs are based on pseudomorphic MODFET devices having 1/4 micron gates fabricated on 3-inch wafers using a hybrid e-beam/optical stepper lithography technique. In addition, to 'standard' pseudomorphic MODFET structures with uniformly doped A1GaAs, psuedo-pulsed-doped structures were also developed to address low drain breakdown voltage problems. 60GHz monolithic gain cells with 10 mW output power were also developed. Keywords: GaAs; MMIC; MM-wave; Monolithic; Octave bandwidth; Distributed amplifier; Cascode; Negative resistance comp.; E-Beam/stepper lithography. (EMK)