MOCVD of Lead-Germanate for Non-Volatile Rams. Phase 1.

摘要

The goal of this research is to fabricate thin film ferroelectric materials for use in non-volatile random access memory (NVRAMs) chips that are radiation resistant and can be used to replace existing memories with the same function in current Navy systems at great savings in weight and power requirements. Suitable non-volatile memories have been demonstrated using ferroelectric materials to store the information in binary code as the direction of polarization of the dielectric. However, these memories have not yet demonstrated adequate retention or cycle lifetime (fatigue) to be used in practical applications. Research is progressing to identify the flaws in existing technology and to explore alternate materials and fabrication methods to extend the fatigue of NVRAMs. Phase I technical objectives were (1) to deposit a thin film of lead-germanate (PGO) with the correct stoichiometry and low levels of contaminants by metalorganic chemical vapor deposition (MOCVD), and (2) to deposit a similar film on a metal substrate, fabricate a capacitor and measure electrical properties. MOCVD of lead germanate has never been reported prior to this innovative work. We achieved objective (1), the fabrication of stoichiometric lead-germanate films, and fabricated the capacitors required for objective (2).