International Workshop on: Hydrogen Migration and the Stability of HydrogenRelated Complexes in Crystalline Semiconductors Held in Federal Republic of Germany on 3-6 November 1991

摘要

Contents: Hydrogen passivation of carbon acceptors in GaAs grown frommetalorganic sources; Raman spectroscopy of localized vibrational modes from carbon-hydrogen pairs in heavily carbon doped GaAs layers grown by metal organic vapor phase epitaxy; H-enhanced oxygen diffusion in silicon; Carbon-hydrogen complexes in gallium arsenide; The hydrogen-carbon complex in silicon: tunneling effect of electrons; Hydrogen ion-implanted into crystalline silicon; Hydrogen related complexes in neutron transmutation doped FZ silicon grown under hydrogen atmosphere; Vibrations of hydrogen complexes in silicon; Hydrogen neutralization of double acceptor centers in silicon; Stability of hydrogen complexes in semi-insulating indium phosphide grown by the liquid encapsulated Czochralski method; O-H and N-H complexes in semi-insulating gallium arsenide; What did we learn from PAC experiments about hydrogen in semiconductors; Structure, stability and internal dynamics of Cd-H complexes in semiconductors; Structure and energy of interstitial hydrogen and hydrogen-related complexes in crystalline semiconductors; Hydrogen in silicon: aspects of solubility, diffusion and catalyzed enhanced oxygen diffusion; The stability of hydrogen complexes in Si and GaAs; Recent studies of hydrogen in silicon and III-V semiconductors; and Multitrapping of atomic hydrogen in doped crystalline silicon.