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Novel Charge Integrating Pulsed I(V) Technique: A Measurement of Fowler-NordheimCurrents through Thin SiO2 Films

机译：新型电荷积分脉冲I（V）技术：通过薄siO2薄膜测量Fowler-Nordheim电流

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The design, characterization and applications of a novel charge integratingpulsed current-voltage I(V) measurement are described. Tunneling transport through thin metal-oxide-semiconductor (MOS) capacitors is measured over ten orders of magnitude of current. Short pulse widths (

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作者
Polar, J. C.; Woodward, W. S.; Irene, E. A.;
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年度 1992
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总页数 29
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Silicon dioxide; Capacitors; Electrons; Injection; Interference; Measurement; Shortpulses; Thin films; Transport; Voltage; Physical properties; Chemical properties; Probes; Electric current; Current density; Tunneling(Electronics); Very large scale integr;

机译：二氧化硅;电容器;电子;注入;干涉;测量;短脉冲;薄膜;传输;电压;物理特性;化学特性;探头;电流;电流密度;隧道（电子）;超大规模集成电路;

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Novel Charge Integrating Pulsed I(V) Technique: A Measurement of Fowler-NordheimCurrents through Thin SiO2 Films

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