Common Themes and Mechanisms of Epitaxial Growth, Symposium held in San Francisco, California on April 13 - 15, 1993. Volume 312, Materials Research Society.

摘要

Partial contents: From Adatom Migration to Chemical Kinetics: Models for MBE, MOMBE and MOCVD; The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001); Evolution of Roughness on InP Layers Observed by Scanning Force Microscopy; Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure; Compositional Ordering in Semiconductor Alloys; Evolving Surface Cusps During Strained Layer Epitaxy; Effects of Minimizing the Driving Force for Epitaxy in the Ge/Si(001) System; A Comparison of Two Epitaxial Formation Mechanisms in the SiGe System; The Role of Vertical Exchange in the Growth of GaAs/AlAs Lateral and Vertical Superlattices; Surface Ordering of MBE Grown 001 Ga05A105As-A Theoretical Study; and Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films.