Novel Approach to the Fabrication of SiC Structures of Arbitrary Shape

摘要

As a result of the Phase I research, we can reproduce clad silicon carbide filmsonto graphite rod substrates. During the course of our research we varied the melt composition, temperature and crucible material. The resultant silicon carbide films were confirmed, independently by Charles Evans Associates using electron microscopy and elemental x-ray analysis. The minimum temperature for silicon carbide formation was determined. The relationship between film thickness and maximum melt temperature was studied. The importance of complete oxygen exclusion was determined. The presence of the proprietary flux was found to be essential in this regard The thickness and integrity of these films are not yet suitable for commercial applications. It is anticipated, that the use of higher temperatures will yield silicon carbide films suitable for extreme environment applications. A new high-efficiency high-temperature furnace was designed with a maximum working temperature of 2000 deg C.