首页> 外军国防科技报告 >ARL-TR-8565 - Testing of 0.25-µm Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) Designs | U.S. Army Research Laboratory
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ARL-TR-8565 - Testing of 0.25-µm Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) Designs | U.S. Army Research Laboratory

机译:ARL-TR-8565 - 0.25微米氮化镓(GaN)单片微波集成电路(MMIC)设计的测试美国陆军研究实验室

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摘要

The US Army Research Laboratory is exploring devices and circuits for RF communications, networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. In any communication system that must operate reliably and efficiently in continually crowded spectrums, efficient, high-power broadband monolithic microwave integrated circuit (MMIC) amplifiers are extremely important. MMIC amplifiers offer multiple purposes for communications, networking, radar, and electronic warfare. This report summarizes testing of MMIC designs, using Qorvo's 0.25-µm high-power and efficient gallium nitride on 4-mil silicon carbide process, that were fabricated under a US Air Force Research Laboratory-sponsored wafer run.

著录项

  • 作者

    Penn, John E.;

  • 作者单位
  • 年(卷),期 2018(),
  • 年度 2018
  • 页码
  • 总页数 38
  • 原文格式 PDF
  • 正文语种
  • 中图分类
  • 网站名称 美国陆军研究实验室
  • 栏目名称 全部文件
  • 关键词

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