ARL-TR-8503 - Aluminum Nitride to Aluminum Nitride Direct Wafer Bonding | U.S. Army Research Laboratory

摘要

A wafer-bonding process based on plasma surface activation of sputter-deposited thin film aluminum nitride (AlN) was studied. The purpose of this investigation and process development was to eventually use AlN as a bonding medium between Metal Organic Chemical Vapor Deposition-grown gallium nitride material and diamond substrate material.