A new single buffer layer for YBCO coated conductors prepared by chemical solution deposition

摘要

A new single buffer layer YBiO3 has been proposed for YBCO coated conductors. Highly c-axis oriented YBiO3 buffer layer has been deposited on single crystal LaAIO(3) by a low-cost chemical solution deposition method in a temperature range as low as 730-800 degrees C in air. A very dense, smooth, pinhole-free morphology has been observed for YBiO3 buffer layer. Dense, homogeneous and epitaxialiy grown YBCO film has been obtained with its onset critical temperature 90 K and J(c) (77 K, 0 T) = 3.1 MA/cm(2). The addition of Bi2O3, Which melts at around 817 degrees C, has been argued to be responsible for the densification as well as low-process temperature of YBiO3 buffer layer. These results offer an alternative to prepare desirable buffer layer(s) for YBCO coated conductors via a cost-effective and easily scalable route. (c) 2007 Elsevier B.V. All rights reserved.