STUDY OF DAMAGE INDUCED BY ROOM-TEMPERATURE AL ION IMPLANTATION IN HG0.8CD0.2TE BY X-RAY DIFFUSE SCATTERING

摘要

Ion-implantation is a widely used doping technique in II-VI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV Al ions have been performed on crystalline samples of 111 Hg1-xCdxTe (x approximate to 20) for doses ranging from 10(13) to 10(15) cm(-2). We report the first measurements of x-ray diffuse scattering close to different Bragg reflections on such as-implanted samples. The evolution of the diffuse intensity as a function of the dose has been observed. The defect-induced diffuse intensity arises mainly from interstitial dislocation loops. Nevertheless, vacancy loops are observed above 3 x 10(14) Al/cm(2). The mean radius of the dislocation loops increases in size by three to four times when the dose rises from 10(13) to 10(15) cm(-2). Finally, the saturation of point defects has been observed independently of their clustering at about 5 x 10(13) Al/cm(2), that is in the same range as the saturation dose of the sheet electron concentration. (C) 1997 American Institute of Physics. References: 34