Fluorinated Organic A-Cation Enabling High-Performance Hysteresis-Free 2D/3D Hybrid Tin Perovskite Transistors

摘要

2D tin-based perovskites have gained considerable attention for use in diverseoptoelectronic applications, such as solar cells, lasers, and thin-filmtransistors (TFTs), owing to their good stability and optoelectronic properties.However, their intrinsic charge-transport properties are limited, and theinsulating bulky organic ligands hinder the achievement of high-mobilityelectronics. Blending 3D counterparts into 2D perovskites to form 2D/3Dhybrid structures is a synergistic approach that combine the high mobility andstability of 3D and 2D perovskites, respectively. In this study, reliablep-channel 2D/3D tin-based hybrid perovskite TFTs comprising 3Dformamidinium tin iodide (FASnI_3) and 2D fluorinated4-fluoro-phenethylammonium tin iodide ((4-FPEA)2_SnI_4) are reported. Theoptimized FPEA-incorporated TFTs show a high hole mobility of12 cm~2 V~(?1) s~(?1), an on/off current ratio of over 108, and a subthreshold swingof 0.09 V dec~(?1) with negligible hysteresis. This excellent p-type characteristicis compatible with n-type metal-oxide TFT for constructing complementaryelectronics. Two procedures of antisolvent engineering and device patterningare further proposed to address the key concern of low-performancereproducibility of perovskite TFTs. This study provides an alternative A-cationengineering method for achieving high-performance and reliable tin-halideperovskite electronics.