Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices

摘要

We investigate the In content in single monolayer (ML)-thick InxGa1-xN quantum wells (QWs) as a function of the growth temperature ranging from 650 degrees C to 480 degrees C, stacked in a superlattice (SL). The SLs were grown by plasma-assisted molecular beam epitaxy using high N-flux. For the evaluation of the indium concentrations, scanning transmission electron microscopy high angle annular dark field (STEM-HAADF) studies were combined with local lattice parameter measurements obtained from high-resolution transmission electron microscopy (HRTEM) images. The mean In content in the QWs increases from 11 to 23 when the growth temperature decreases from 650 degrees C to 610 degrees C. Further decrease in the growth temperature results in a saturation of the mean In content. Our experiments show that a substantial reduction of the growth temperature is not a practical way to obtain pseudomorphically grown InN MLs on GaN(0001). The InGaN QW thickness is limited to 1 ML and is not affected by a change of growth temperature. For two SL structures grown at constant temperatures of 640 degrees C and 600 degrees C, increase in the In content in the QWs causes a shift in the peak emission from 382 to 395 nm, as was measured by cathodoluminescence at 7 K. The application of X-ray diffraction studies to analyze the composition of InGaN ML-thick QWs in SLs is discussed. Published by AIP Publishing.